MJD18002D2T4G Selling Leads, Price trend , ON Semiconductor, MJD18002D2T4G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00209996 Detail

MJD18002D2T4G: Transistors Bipolar (BJT) BIP NPN 2A 450V TR F

MJD18002D2T4G Data Sheet

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Part Number:: MJD18002D2T4G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/5/3

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What is this?

MJD112 evaluate
Transistors Darlington 2A 100V Bipolar
MJD112/L evaluate
Features: ·High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A.·Low Collector-Emitter Saturation...
MJD112-001 evaluate
Transistors Darlington 2A 100V Bipolar

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	450 V
Emitter- Base Voltage VEBO :	11 V	Maximum DC Collector Current :	2 A
DC Collector/Base Gain hfe Min :	14	Configuration :	Single
Maximum Operating Frequency :	13 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	DPAK
Packaging :	Reel

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum DC Collector Current : 2 A
Collector- Emitter Voltage VCEO Max : 450 V
DC Collector/Base Gain hfe Min : 14
Maximum Operating Frequency : 13 MHz
Emitter- Base Voltage VEBO : 11 V

Parameters:

Technical/Catalog Information	MJD18002D2T4G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	450V
Current - Collector (Ic) (Max)	2A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 400mA, 1V
Vce Saturation (Max) @ Ib, Ic	600mV @ 40mA, 400mA
Frequency - Transition	13MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD18002D2T4G MJD18002D2T4G MJD18002D2T4GOSCT ND MJD18002D2T4GOSCTND MJD18002D2T4GOSCT

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MJD18002D2T4G

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