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MJD18002D2T4G

Transistors Bipolar (BJT) BIP NPN 2A 450V TR F

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MJD18002D2T4G: Transistors Bipolar (BJT) BIP NPN 2A 450V TR F

MJD18002D2T4G Data Sheet

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Part Number:
MJD18002D2T4G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 11 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 14 Configuration : Single
Maximum Operating Frequency : 13 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum DC Collector Current : 2 A
Collector- Emitter Voltage VCEO Max : 450 V
DC Collector/Base Gain hfe Min : 14
Maximum Operating Frequency : 13 MHz
Emitter- Base Voltage VEBO : 11 V


Parameters:

Technical/Catalog InformationMJD18002D2T4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)450V
Current - Collector (Ic) (Max)2A
Power - Max50W
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 400mA, 1V
Vce Saturation (Max) @ Ib, Ic600mV @ 40mA, 400mA
Frequency - Transition13MHz
Current - Collector Cutoff (Max)100A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJD18002D2T4G
MJD18002D2T4G
MJD18002D2T4GOSCT ND
MJD18002D2T4GOSCTND
MJD18002D2T4GOSCT



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