MJD3055

Transistors Bipolar (BJT) 10A 60V 20W NPN

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SeekIC No. : 00214916 Detail

MJD3055: Transistors Bipolar (BJT) 10A 60V 20W NPN

floor Price/Ceiling Price

Part Number:
MJD3055
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 20 at 4 A at 4 V Configuration : Single
Maximum Operating Frequency : 2 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum Operating Frequency : 2 MHz (Min)
Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 20 at 4 A at 4 V


Parameters:

Technical/Catalog InformationMJD3055
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)10A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic1.1V @ 400mA, 4A
Frequency - Transition2MHz
Current - Collector Cutoff (Max)50A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJD3055
MJD3055



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