MJD3055T4G

Transistors Bipolar (BJT) 10A 60V 20W NPN

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MJD3055T4G: Transistors Bipolar (BJT) 10A 60V 20W NPN

floor Price/Ceiling Price

US $ .25~.44 / Piece | Get Latest Price
Part Number:
MJD3055T4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.44
  • $.39
  • $.29
  • $.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 20 at 4 A at 4 V Configuration : Single
Maximum Operating Frequency : 2 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 2 MHz (Min)
Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 20 at 4 A at 4 V


Parameters:

Technical/Catalog InformationMJD3055T4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)10A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic1.1V @ 400mA, 4A
Frequency - Transition2MHz
Current - Collector Cutoff (Max)50A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingDigi-Reel?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJD3055T4G
MJD3055T4G
MJD3055T4GOSDKR ND
MJD3055T4GOSDKRND
MJD3055T4GOSDKR



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