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MFG:ON Semiconductor Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Descriptions: TRANS POWER NPN 10A 60V DPAK

Price Break

1
10
100
250
500
1000
2500
5000

Unit Price

.78000
.72700
.60360
.51420
.44712
.34652
.31298
.29733

Extended Price

0.78
7.27
60.36
128.55
223.56
346.52
782.45
1486.65

(All prices are in USD) Prices for reference only

TRANS POWER NPN 10A 60V DPAK

Technical/Catalog Information	MJD3055G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	10A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 400mA, 4A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	50A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD3055G MJD3055G MJD3055GOS ND MJD3055GOSND MJD3055GOS

MJD112
PDF/DataSheet Download

·MJD112/L
KEC
EPITAXIAL PLANAR NPN TRANSISTOR
32768 KB
·MJD112-001
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD1121
MOTOROLA [Motorola, Inc]
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
313845 KB
·MJD112L
KEC [KEC(Korea Electronics)]
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
404075 KB
·MJD112RL
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD112T4
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
313845 KB
·MJD112T4G
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD117
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
404229 KB

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