Purchase MJD31C1, In-stock MJD31C1 From SeekIC.
MFG:ON Semiconductor Category:Discrete Semiconductor Products
Part Number: MJD31C1
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Descriptions: TRANS POWER NPN 3A 100V DPAK-3
- Table of contents:
MJD31C1
-
Suppliers
DataSheet
General Description
MJD31C1 General Description
TRANS POWER NPN 3A 100V DPAK-3
MJD31C1 Parameters
| Technical/Catalog Information | MJD31C1 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 3A |
| Power - Max | 15W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Frequency - Transition | 3MHz |
| Current - Collector Cutoff (Max) | 50A |
| Mounting Type | Through Hole |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJD31C1 MJD31C1 |
MJD112
PDF/DataSheet Download
- Datasheet: MJD112
- File Size: 52676 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
- ·MJD112/L
- KEC
- EPITAXIAL PLANAR NPN TRANSISTOR
- 32768 KB
- ·MJD112-001
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD1121
- MOTOROLA [Motorola, Inc]
- SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
- 313845 KB
- ·MJD112L
- KEC [KEC(Korea Electronics)]
- EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
- 404075 KB
- ·MJD112RL
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD112T4
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 313845 KB
- ·MJD112T4G
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD117
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 404229 KB
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