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MFG:ON Semiconductor Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Descriptions: TRANS POWER NPN 3A 100V DPAK

Price Break

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10
100
250
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5000

Unit Price

.52000
.46600
.38500
.32292
.26082
.19872
.18630
.17699

Extended Price

0.52
4.66
38.50
80.73
130.41
198.72
465.75
884.95

(All prices are in USD) Prices for reference only

TRANS POWER NPN 3A 100V DPAK

Technical/Catalog Information	MJD31CG
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	3A
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	50A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD31CG MJD31CG MJD31CGOS ND MJD31CGOSND MJD31CGOS

MJD112
PDF/DataSheet Download

·MJD112/L
KEC
EPITAXIAL PLANAR NPN TRANSISTOR
32768 KB
·MJD112-001
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD1121
MOTOROLA [Motorola, Inc]
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
313845 KB
·MJD112L
KEC [KEC(Korea Electronics)]
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
404075 KB
·MJD112RL
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD112T4
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
313845 KB
·MJD112T4G
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD117
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
404229 KB

MJD31C1G
TRANS POWER NPN 3A 100V DPAK-3
MJD31C1
TRANS POWER NPN 3A 100V DPAK-3
MJD31C
TRANSISTOR PWR COMPL D-PAK
MJD31B/31C
The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs.They are manufactured using Epitaxial Base technology for cost-effective performance.
MJD31/31C
MJD31,C

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