Purchase MJD32C, In-stock MJD32C From SeekIC.
- Table of contents:
MJD32C
-
Suppliers
DataSheet
General Description
MJD32C Maximum Ratings
| Part Number | MJD32C |
| Product Type | PNP |
| VCEO (V) | -100 |
| IC (A) | -3 |
| ICM (A) | -5 |
| PD (W) | 1.56 |
| hFE Min | 10 |
| hFE Max | 50 |
| @ IC (A) | -3 |
| VCE (SAT) Max (mV) | -1200 |
| @ IC (A) | -3 |
| @ IB (mA) | -375 |
| fT Min (MHz) | 3 |
| RCE (SAT) (mΩ) | - |
MJD32C
PDF/DataSheet Download
- Datasheet: MJD32C
- File Size: 50453 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
- ·MJD112
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 52676 KB
- ·MJD112/L
- KEC
- EPITAXIAL PLANAR NPN TRANSISTOR
- 32768 KB
- ·MJD112-001
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD1121
- MOTOROLA [Motorola, Inc]
- SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
- 313845 KB
- ·MJD112L
- KEC [KEC(Korea Electronics)]
- EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
- 404075 KB
- ·MJD112RL
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD112T4
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 313845 KB
- ·MJD112T4G
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
MJD32C Relative Products
MJD32B/32C
The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs.They are manufactured using Epitaxial Base technology for cost-effective performance.
MJD32/32C
MJD32,C
MJD31T4G
TRANS POWER NPN 3A 40V DPAK
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MJD31T4
TRANS POWER NPN 3A 40V DPAK
MJD31CTF_SBDD001A
TRANS NPN 100V 3A DPAK
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