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MFG:STMicroelectronics Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Descriptions: TRANSISTOR PNP 100V 3A DPAK

Price Break

2500

Unit Price

.33750

Extended Price

843.75

(All prices are in USD) Prices for reference only

TRANSISTOR PNP 100V 3A DPAK

Technical/Catalog Information	MJD32CT4-A
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	3A
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	50A
Mounting Type	Surface Mount
Package / Case	DPak, TO-252 (2 leads + tab)
Packaging	Tape & Reel (TR)
Drawing Number	497; P032P; T4; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD32CT4 A MJD32CT4A

MJD112
PDF/DataSheet Download

·MJD112/L
KEC
EPITAXIAL PLANAR NPN TRANSISTOR
32768 KB
·MJD112-001
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD1121
MOTOROLA [Motorola, Inc]
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
313845 KB
·MJD112L
KEC [KEC(Korea Electronics)]
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
404075 KB
·MJD112RL
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD112T4
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
313845 KB
·MJD112T4G
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD117
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
404229 KB

MJD32CT4
TRANSISTOR PNP 100V 3A DPAK
MJD32CRLG
TRANS POWER PNP 3A 100V DPAK
MJD32CRL
TRANS POWER PNP 3A 100V DPAK
MJD32CG
TRANS POWER PNP 3A 100V DPAK
MJD32C
TRANSISTOR PWR COMPL D-PAK
MJD32B/32C
The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs.They are manufactured using Epitaxial Base technology for cost-effective performance.

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