MJD350G Selling Leads, Price trend , ON Semiconductor, MJD350G DataSheet download, circuit diagram from SeekIC.com

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MJD350G: Transistors Bipolar (BJT) 0.5A 300V 15W PNP

MJD350G Data Sheet

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Part Number:: MJD350G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/23

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Transistors Bipolar (BJT) NPN Gen Pur Switch

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	300 V
Emitter- Base Voltage VEBO :	3 V	Maximum DC Collector Current :	0.5 A
DC Collector/Base Gain hfe Min :	30 at 50 mA at 10 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Tube

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Package / Case : DPAK
Packaging : Tube
Maximum DC Collector Current : 0.5 A
Collector- Emitter Voltage VCEO Max : 300 V
Emitter- Base Voltage VEBO : 3 V
DC Collector/Base Gain hfe Min : 30 at 50 mA at 10 V

Parameters:

Technical/Catalog Information	MJD350G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	500mA
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD350G MJD350G MJD350GOS ND MJD350GOSND MJD350GOS

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MJD350G

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