MJE243

Transistors Bipolar (BJT) 4A 100V 15W NPN

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SeekIC No. : 00214960 Detail

MJE243: Transistors Bipolar (BJT) 4A 100V 15W NPN

floor Price/Ceiling Price

Part Number:
MJE243
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 40 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-225
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 7 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 40 MHz (Min)
Package / Case : TO-225


Specifications

Rating
Symbol
Value
Unit
CollectorEmitter Sustaining Voltage
VCEO
100
Vdc
CollectorBase Breakdown Voltage
VCB
100
Vdc
Emitter-Base Voltage
VEB
7.0
Vdc
Collector Current - Continuous
- Peak
IC
4.0
8.0
Adc
Base Current - Continuous
- Peak
IB
10
Adc
Total Device Dissipation @ TA = 250C
Derated above 25°C
PD
15
0.12
Watts
W/ac
Total Device Dissipation @ TC = 250C
Derated above 25°C
PD
1.5
0.012
Watts
W/
Operating and Storage Temperature
Tj,Tstg
-65 to +150






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