MMDF2C03HDR2G

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 4.1 A at N Channel, 3 A at P Channel
Resistance Drain-Source RDS (on) : 70 mOhms at N Channel, 200 mOhms at P Channel


Parameters:

Technical/Catalog Information	MMDF2C03HDR2G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4.1A, 3A
Rds On (Max) @ Id, Vgs	70 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	630pF @ 24V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	16nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMDF2C03HDR2G MMDF2C03HDR2G MMDF2C03HDR2GOSDKR ND MMDF2C03HDR2GOSDKRND MMDF2C03HDR2GOSDKR