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MFG:MOT  Package Cooled:SOP8  

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Part Number: MMDF2N02E

 

MFG: MOT

Package Cooled: SOP8

 

Description: MiniMOSETM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS pr...


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MMDF2N02E General Description


MiniMOSETM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• IDSS Specified at Elevated Temperatures
• Avalanche Energy Specified
• Mounting Information for SO8 Package Provided

MMDF2N02E Maximum Ratings

Rating
Symbol
Value
Units
DraintoSource Voltage
VDS
50
V
GatetoSource Voltage - Continuous
VGS
±20
V
Drain Current - Continuous @ TA = 25°C
Drain Current - Continuous @ TA = 100°C
Drain Current - Single Pulse (tp 10s)
ID
ID
IDM
3.6
2.5
18
Adc

Apk
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 6.0 mH, RG = 25 )
EAS
245
mJ
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Total Power Dissipation @ TA = 25°C(1)
PD
2.0
W
Thermal Resistance Junction to Ambient (1)
RJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 0.0625, from case for 10 seconds
TL
260
°C
(1) Pulse Test: Pulse Width   300 s, Duty Cycle   2%.

MMDF2N02E Connection Diagram

MMDF2N02E  Connection Diagram

MMDF2N02E datasheet

MMDF2N02E
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