MFG:ON Package Cooled:SOP8 D/C:08+
MFG: ON
Package Cooled: SOP8
D/C: 08+
Description: WaveFETE devices are an advanced series of power MOSFETs which utilize Motorola's latest MOSFET techno...
WaveFETE devices are an advanced series of power MOSFETs which utilize Motorola's latest MOSFET technology process to achieve the lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. WaveFETE devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications
• Characterized Over a Wide Range of Power Ratings
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• IDSS Specified at Elevated Temperature
• Miniature SO8 Surface Mount Package - Saves Board Space
|
Characteristics |
Symbol |
Maximum |
Unit | |
| DraintoSource Voltage DraintoGate Voltage (RGS = 1.0 M) GatetoSource Voltage - Continuous |
VDSS VDGR VGS |
30 20 ±20 |
V | |
| 1 Inch Square @ 10 seconds on FR4 or G10 PCB |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Drain Current - Continuous @ TA = 70°C Drain Current - Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
62.5 2.0 16 7.3 4.9 44 |
°C/W Watts mW/°C A A A |
| 1 Inch Square @ Steady State on FR4 or G10 PCB |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Drain Current - Continuous @ TA = 70°C Drain Current - Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
98 1.28 10.2 5.8 3.9 35 |
°C/W Watts mW/°C A A A |
| Minimum Pad @ Steady State on FR4 or G10 PCB |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Drain Current - Continuous @ TA = 70°C Drain Current - Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
166 0.75 6.0 4.5 3.0 27 |
°C/W Watts mW/°C A A A |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C | |
MMDF3304/D
PDF/DataSheet Download
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