MMFT2406T1

MOSFET N-CH 240V 700MA SOT223

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MMFT2406T1 Picture
SeekIC No. : 003430554 Detail

MMFT2406T1: MOSFET N-CH 240V 700MA SOT223

floor Price/Ceiling Price

Part Number:
MMFT2406T1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 240V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 700mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 125pF @ 25V
Power - Max: 1.5W Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
Gate Charge (Qg) @ Vgs: -
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25° C: 700mA
Packaging: Digi-Reel®
Vgs(th) (Max) @ Id: 2V @ 1mA
Manufacturer: ON Semiconductor
Input Capacitance (Ciss) @ Vds: 125pF @ 25V


Features:

`  Silicon Gate for Fast Switching Speeds
`  High Voltage -240 Vdc
`  Low Drive Requirement
` The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
 ` Pb-Free Packages are Available




Pinout

  Connection Diagram


Specifications

Rating

Symbol

Value

Unit

Drain-to-Source Volta

VDSS

240

Volts

Gate-to-Source Voltage - Non -Repeti

VGS

±20

Volts

Drain Current

ID

700

mAdc

Total Power Dissipation @ TA = 25
(Note 1)
Derate above 25

PD

1.5
12

Watts
mW/

Operating and Storage Temperature
Range

TJ ,Tstg

-65 to 150




Description

This MMFT2406T1 Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.




Parameters:

Technical/Catalog InformationMMFT2406T1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)240V
Current - Continuous Drain (Id) @ 25° C700mA
Rds On (Max) @ Id, Vgs6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 125pF @ 25V
Power - Max1.5W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MMFT2406T1
MMFT2406T1
MMFT2406T1OSDKR ND
MMFT2406T1OSDKRND
MMFT2406T1OSDKR



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