Purchase MMFT2N25E, In-stock MMFT2N25E From SeekIC.
MFG:ON D/C:00+
Part Number: MMFT2N25E
MFG: ON
D/C: 00+
Description: This advanced high voltage TMOS E-FET is designed t withstand high energy in the avalanche mode and sw...
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MMFT2N25E
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DataSheet
General Description
MMFT2N25E General Description
This advanced high voltage TMOS E-FET is designed t withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source dio with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MMFT2N25E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| Drain-to-Source Volta |
VDSS |
250 |
Vdc |
| Drain-to-Gate Voltage, ( RGS = 1.0 m ) |
VDGR |
250 |
Vdc |
| Gate-to-Source Voltage - Continu |
VGS |
20 |
Vdc |
| Gate-to-Source Voltage - Single Pulse (tp 50 S) |
VGSM |
40 |
Vdc |
| Drain Current - Continuous @TC = 25C Drain Current - Continuous @TC = 100C Drain Current - Single Pulse (tp 10 S) |
ID |
2.0 |
Adc |
| Total Power Dissipation @ TC = 25 Derate above 25 Total PD @ TA = 25 mounted on 1" Sq. Drain Pad on FR-4 Bd. Materia Total PD @ TA = 25 mounted on 0.7" Sq. Drain Pad on FR-4 Bd. Materia Total PD @ TA = 25 mounted on min. Drain Pad on FR-4 Bd. Materia |
PD |
0.77 |
Watts |
| Operating and Storage Temperature Range |
TJ ,Tstg |
-55 to 150 |
MMFT2N25E Features
· Avalanche Energy Capability Specified at Elevated Temperature
· Internal Source-to-Drain Diode Designed to Replace Extern Zener Transient Suppressor - Absorbs High Energy in th Avalanche Mode
· Source-to-Drain Diode Recovery Time Comparable Discrete Fast Recovery Diode
MMFT2N25E
PDF/DataSheet Download
- Datasheet: MMFT2N25E
- File Size: 142719 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
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