MMFTN3018W

The MMFTN3018W is a kind of silicon N-channel MOSFET which can applied in interfacing, switching.

The absolute maximum ratings of MMFTN3018W are (1)drain source voltage VDSS: 30 V; (2)gate source voltage VGSS: ± 20 V; (3)drain current ID: 100 mA; (4)drain current (pulsed) IDP 1): 400 mA; (5)total power dissipation Ptot 2): 200 mW; (6)channel temperature Tch: 150°C; (7)storage temperature range Ts: - 55 to + 150°C.

The characteristics at Ta = 25°C of MMFTN3018W can be summarized as (1)drain source breakdown voltage at I D = 10 A V (BR)DSS 30: V; (2)zero gate voltage drain current at V DS = 30 V I DSS : 1 A; (3)gate source leakage current at V GS = ± 20 V ±I GSS : 1 A; (4)gate source threshold voltage at V DS = 3 V, I D = 100 A V GS(th) 0.8: 1.5 V; (5)static drain source on-state resistance at V GS = 4 V, I D = 10 mA R DS(on): 8; (6)static drain source on-state resistance at V GS = 2.5 V, I D = 1 mA R DS(on): 3; (7)forward transfer admittance at V DS = 3 V, I D = 10 mA |y fs | 20: mS; (8)input capacitance at V DS = 5 V, f = 1 MHz C iss: 13pF; (9)output capacitance at V DS = 5 V, f = 1 MHz C oss: 9pF; (10)reverse transfer capacitance at V DS = 5 V, f = 1 MHz C rss: 4 pF.