MOCD217-M General Description
The MOCD217-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
MOCD217-M Maximum Ratings
MOCD217-M Features
• U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option "V" for VDE approval, i.e, MOCD217V-M)
• Low Input Current (Specified @ 1 mA)
• Minimum BVCEO of 30 Volts Guaranteed
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 VAC(rms) Guaranteed
MOCD217-M Typical Application
• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits
MOCD217-M Connection Diagram
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