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MPIC2117

Features: • Floating Channel Designed for Bootstrap Operation• Fully Operational to +600 V• Tolerant to Negative Transient Voltage• dV/dt Immune• Gate Drive Supply Range from 10 to 20 V• Undervoltage Lockout• CMOS Schmitttriggered Input with Pulldown•...

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SeekIC No. : 004426286 Detail

MPIC2117: Features: • Floating Channel Designed for Bootstrap Operation• Fully Operational to +600 V• Tolerant to Negative Transient Voltage• dV/dt Immune• Gate Drive Supply Rang...

MPIC2117 Data Sheet

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Part Number:
MPIC2117
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Floating Channel Designed for Bootstrap Operation
• Fully Operational to +600 V
• Tolerant to Negative Transient Voltage
• dV/dt Immune
• Gate Drive Supply Range from 10 to 20 V
• Undervoltage Lockout
• CMOS Schmitttriggered Input with Pulldown
• Output In Phase with Input


Pinout

Connection Diagram


Specifications

Rating
Symbol
Min
Max
Unit
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Logic Supply Voltage
Logic Input Voltage
VB
VS
VHO
VCC
VIN
0.3
VB25
VS0.3
0.3
0.3
625
VB+0.3
VB+0.3
25
VCC+0.3
VDC
Allowable Offset Supply Voltage Transient
dVS/dt
50
V/ns
*Package Power Dissipation @ TA +25 (8 Lead DIP)
(8 Lead SOIC)
PD

1.0
0.625
Watt
Thermal Resistance, Junction to Ambient (8 Lead DIP)
(8 Lead SOIC)
RqJA

125
200
/W
Operating and Storage Temperature
Tj, Tstg
55
150
Lead Temperature for Soldering Purposes, 10 seconds
TL
260



Description

The MPIC2117 is a high voltage, high speed, power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output drivers MPIC2117 feature a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side or low side configuration which operates from 10 to 600 volts.




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