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Part Number: MR18R1622

 

 

 

 

 

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MR18R1622 Maximum Ratings

Symbol Parameter
Min
Max
Unit
VI,ABS Voltage applied to any RSL or CMOS signal pad with respect to Gnd
- 0.3
VDD + 0.3
V
VDD,ABS Voltage on VDD with respect to Gnd
- 0.5
VDD + 1.0
V
TSTORE Storage temperature
- 50
100
°C
TPLATE Plate temperature
-
92
°C

MR18R1622 Features

`High speed up to 1066 MHz RDRAM storage
`184 edge connector pads with 1mm pad spacing
`Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25" x 1.25" x 0.05") - 256Mb base RIMM Module
`Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25" x 1.375" x 0.05") - 288Mb base RIMM Module
`Each RDRAM device has 32 banks, for a total of 512, 256, 128, 64 banks on each 512/576MB, 256/288MB, 128/144MB, 64/72MB module respectively
`Gold plated edge connector pad contacts
`Serial Presence Detect(SPD) support
`Operates from a 2.5 volt supply (±5%)
`Powerdown self refresh modes
`Separate Row and Column buses for higher efficiency
`WBGA package (92 balls)

MR18R1622 datasheet

MR18R16224DF0
PDF/DataSheet Download

  • Datasheet: MR18R16224DF0
  • File Size: 453090 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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