Purchase MR18R16224DF0, In-stock MR18R16224DF0 From SeekIC.
- Table of contents:
MR18R16224DF0
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Suppliers
DataSheet
General Description
MR18R16224DF0 Maximum Ratings
| Symbol | Parameter |
Min |
Max |
Unit |
| VI,ABS | Voltage applied to any RSL or CMOS signal pad with respect to Gnd |
- 0.3 |
VDD + 0.3 |
V |
| V DD,ABS | Voltage on VDD with respect to Gnd |
- 0.5 |
VDD + 1.0 |
V |
| TSTORE | Storage temperature |
- 50 |
100 |
°C |
| TPLATE | Plate temperature |
- |
92 |
°C |
MR18R16224DF0 Features
`High speed up to 1066 MHz RDRAM storage
`184 edge connector pads with 1mm pad spacing
`Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25" x 1.25" x 0.05") - 256Mb and 288Mb base PC800 RIMM Module
`Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25" x 1.375" x 0.05") - 256Mb and 288Mb base PC1066 RIMM Module
`Each RDRAM device has 32 banks, for a total of 512, 256, 128, 64 banks on each 512/576MB, 256/288MB, 128/144MB, 64/72MB module respectively
`Gold plated edge connector pad contacts
`Serial Presence Detect(SPD) support
`Operates from a 2.5 volt supply (±5%)
`Powerdown self refresh modes
`Separate Row and Column buses for higher efficiency
`WBGA package (92 balls)
`184 edge connector pads with 1mm pad spacing
`Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25" x 1.25" x 0.05") - 256Mb and 288Mb base PC800 RIMM Module
`Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25" x 1.375" x 0.05") - 256Mb and 288Mb base PC1066 RIMM Module
`Each RDRAM device has 32 banks, for a total of 512, 256, 128, 64 banks on each 512/576MB, 256/288MB, 128/144MB, 64/72MB module respectively
`Gold plated edge connector pad contacts
`Serial Presence Detect(SPD) support
`Operates from a 2.5 volt supply (±5%)
`Powerdown self refresh modes
`Separate Row and Column buses for higher efficiency
`WBGA package (92 balls)
MR18R16224DF0
PDF/DataSheet Download
- Datasheet: MR18R16224DF0
- File Size: 453090 KB
- Manufacturer: SAMSUNG [Samsung semiconductor]
- Click here to Download
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