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Part Number: MRF21045LR3

 

 

 

 

 

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MRF21045LR3 Maximum Ratings

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 105
0.60
Watts
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C

MRF21045LR3 Typical Application

Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
   f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
   Adjacent Channels measured over 3.84 MHz Bandwidth at  f1 -5 MHz
   and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
   at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
   Output Power ó 10 Watts Avg.
   Efficiency ó 23.5%
   Gain ó 15 dB
   IM3 ó -37.5 dBc
   ACPR ó -41 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
   Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40 Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

MRF21045LR3 Connection Diagram

MRF21045LR3  Connection Diagram

MRF21045LR3 datasheet

MRF21045LR3
PDF/DataSheet Download

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