MRF2369

The MRF2369 is a kind of NPN silicon high frequency transistor. The device is designed for low-noise, wide dynamic range front and amplifiers, low-noise VCO's and microwave power multipliers. There are some features as follows: (1)low noise; (2)high gain; (3)available in low cost plastic package; (4)state-of-the-art technology: fine line geometry, ion implanted arsenic emiiters, gold top metallization and wires and silicon nitride passivation; (5)fully characterized; (6)higher voltage version of MRF571; (7)internally ballasted for improved ruggedness.

What comes next is about the absolute maximum ratings of MRF2369: (1)collector to base voltage, VCBO: 30 V; (2)collector to emitter voltage, VCEO: 15 V; (3)emitter to base voltage, VEBO: 2.5 V; (4)collector current, IC: 70 mA; (5)total device dissipation @ TC=50, PD: 0.75 mW; (6)storage temperature, Tstg: -65 to +150.

The following is about the electrical characteristics (Ta=25 unless otherwise noted) of MRF2369: (1)collector-base breakdown voltage, V(BR)CBO: 30 V min at IC=0.1 mA, IE=0; (2)collector-emitter breakdown voltage, V(BR)CEO: 15 V min at IC=1 mA, IE=0; (3)collector cutoff current, ICBO: 10A max at VCB=15 V, IE=0; (4)emitter-base breakdown voltage, V(BR)CEO: 2.5 V min at IC=50A, IC=0; (5)DC current gain, hFE: 50 min and 300 max at VCE=12.5 V, IC=12.5 mA; (6)gain-bandwidth product, fT: 6 GHz typ at VCE=10 V, IC=40 mA, f=1 GHz; (7)gain @ noise figure, GNF: 16.5 dB typ at IC=5 mA, VCE=10 V, f=0.5 GHz; 10 dB min and 12 dB typ at IC=5 mA, VCE=10 V, f=1 GHz; (8)noise figure, NF: 1 dB typ at IC=5 mA, VCE=10 V, f=0.5 GHz; 1.5 dB typ and 2 dB max at IC=5 mA, VCE=10 V, f=1 GHz; 2.8 dB typ at IC=5 mA, VCE=10 V, f=2 GHz.