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MFG:32  Package Cooled:MOT  

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Part Number: MRF5S21100L

 

MFG: 32

Package Cooled: MOT

 

Description: Designed for WCDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA...


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MRF5S21100L General Description


Designed for WCDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used i n Class AB f o r PCNPCS/cellular radio and WLL applications.

• Typical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 1050 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power - 23 Watts Avg.
Power Gain - 13.5 dB
Efficiency - 26%
IM3 - 37 dBc
ACPR - 40 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40, Nominal.

MRF5S21100L Maximum Ratings

Rating Symbol Value Unit
DrainSource Voltage VDSS 65 Vdc
GateSource Voltage VGS 0.5, +15 Vdc
Total Device Dissipation @ TC = 25
Derate above 25
PD 250
1.43
Watts
W/
Storage Temperature Range Tstg 65 to +150
Operating Junction Temperature TJ 200

MRF5S21100L datasheet

MRF5S21100L
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