Specifications Rating Symbol Value Unit DrainSource Voltage VDSS 65 Vdc GateSource Voltage VGS 0.5, +15 Vdc Total Device Dissipation @ TC = 25Derate above 25 PD 2501.43 WattsW/ Storage Temperature Range Tstg 65 to +150 Operating Junction Temperature TJ 200 De...
MRF5S21100L: Specifications Rating Symbol Value Unit DrainSource Voltage VDSS 65 Vdc GateSource Voltage VGS 0.5, +15 Vdc Total Device Dissipation @ TC = 25Derate above 25 PD 2501.43 Wat...
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| Rating | Symbol | Value | Unit |
| DrainSource Voltage | VDSS | 65 | Vdc |
| GateSource Voltage | VGS | 0.5, +15 | Vdc |
| Total Device Dissipation @ TC = 25 Derate above 25 |
PD | 250 1.43 |
Watts W/ |
| Storage Temperature Range | Tstg | 65 to +150 | |
| Operating Junction Temperature | TJ | 200 |
MRF5S21100L is Designed for WCDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used i n Class AB f o r PCNPCS/cellular radio and WLL applications.
MRF5S21100L features
• Typical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 1050 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power - 23 Watts Avg.
Power Gain - 13.5 dB
Efficiency - 26%
IM3 - 37 dBc
ACPR - 40 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40, Nominal.