MSM51V4400

The MSM51V4400 is a kind of 1,048,576-word*4-bit dynamic random access memory fabricated in OKI's CMOS silicon gate technology. The device achieves high integration, high-speed operation, and low-power consumption due to quadruple polysilicon double metal CMOS. The device is available in a 26/20-pin plastic SOJ or 26/20-pin plastic TSOP. The MSM51V4400L (the low power version) and the MSM51V4400SL (the self-refresh version) are specially designed for lower-power applications.

There are some features as follows: (1)1,048,576-word*4-bit configuration; (2)single 3.3 V power supply, ±0.3 V tolerance; (3))input: LVTTL compatible, low input capacitance; (4)output: LVTTL compatible, 3-state; (5)refresh: 1024 cycles/16 ms, 1024 cycles/128 ms (L/SL version); (6)CAS before RAS refresh, hidden refresh, RAS-only refresh capability; (7)multi-bit test mode capability; (8)CAS before RAS self-refresh capability (SL version).

What comes next is about the absolute maximum ratings: (1)voltage on any pin relative to VSS, VT: -0.5 to 4.6 V; (2)short circuit output current, IOS: 50 mA; (4)power dissipation, PD: 1 W; (5)operating temperature, Topr: 0 to 70; (6)storage temperature, Tstg: -55 to 150. Then is about the recommended operating conditions: (1)power supply voltage, VCC: 3.0 V min, 3.3 V typ and 3.6 V max; (2)power supply voltage, VSS: 0 V min, 0 V typ and 0 V max; (3)input high voltage, VIH: 2.0 V min and VCC+0.3 V max; (4)input low voltage, VIL: -0.3 V min and 0.8 V max. The last one is about the capacitance (Ta=25, f=1 MHz): (1)input capacitance (A0-A9), CIN1: 5 pF max; (2)input capacitance (RAS, LCAS, UCAS, WE, OE), CIN2: 7 pF max; (3)output capacitance (DQ1-DQ4), CI/O: 7 pF max.