MSM548262-60

The MSM548262-60 is a kind of 2-Mbit CMOS multiport DRAM which includes a 262,144-word by 8-bit dynamic RAM, and a 512-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between any selected row in the RAM port and the SAM port. Except the conventional multiport DRAM operating modes, the device features block write, flash write functions on the RAM port and a split data transfer capability on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flipflops.

There are some features as follows: (1)single power supply: 5 V± 10%; (2)full TTL compatibility; (3)multiport organization; (4)RAM: 256K word*8 bits; (5)SAM: 512 word *8 bits; (6)fast page mode; (7)write per bit; (8)masked flash write; (9)masked block write; (10)ras only refresh; (11)cas before ras refresh; (12)hidden refresh; (13)serial read/write; (14)512 tap location; (15)bidirectional data transfer; (16)split transfer; (17)masked write transfer; (18)refresh: 512 cycles/8 ms; (19)40-pin 400 mil plastic SOJ (SOJ40-P-400-1.27) (Product: MSM548262-60JS) and 44/40-pin 400 mil plastic TSOP (Type II)(TSOPII44/40-P-400-0.80-K)(Product: MSM548262-60TS-K).

What comes next is about the absolute maximum ratings: (1)input output voltage, VT: -1.0 to 7.0 V at Ta=25; (2)output current, IOS: 50 mA at Ta=25; (3)power dissipation, PD: 1 W at Ta=25; (4)operating temperature, Topr: 0 to 70; (5)storage temperature, Tstg: -55 to 150. Then is about the recommended operating conditions (Ta=0 to 70): (1)power supply voltage, VCC: 4.5 V min, 5.0 V typ and 5.5 V max; (2)input high voltage, VIH: 2.4 V min and 6.5 V max; (3)input low voltage, VIL: -1.0 V min and 0.8 V max. The last one is about the capacitance (VCC=5 V±10%, f=1 MHz, Ta=25): (1)input capacitance, Ci: 8 pF max; (2)input/output capacitance, Cio: 9 pF max; (3)output capacitance, Co(QSF): 9 pF max.