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Part Number: MSM56V16160DH

 

 

 

 

Description: The MSM56V16160D/DH is a 2-bank ×524,288-word×16-bit synchronous dynamic RAM, fabricated i...


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MSM56V16160DH General Description


The MSM56V16160D/DH is a 2-bank ×524,288-word × 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

MSM56V16160DH Maximum Ratings

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to VCC +0.5
V
VCC Supply Voltage
VCC, VCCQ
-0.5 to 4.6
V
Storage Temperature
Tstg
-55 to 150
°C
Power Dissipation
PD*
600
mW
Short Circuit Current
IOS
50
mA
Operating Temperature
Topr
0 to 70
°C

*: Ta = 25°C

MSM56V16160DH Features

•Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
•2-bank *524,288-word * 8-bit configuration
•3.3 V power supply, ±0.3 V tolerance
•Input: LVTTL compatible
•Output: LVTTL compatible
•Refresh: 4096 cycles/64 ms
•Programmable data transfer mode
  CAS atency (1, 2, 3)
  CAS latency (2, 3)*1
  Burst length (1, 2, 4, 8, full page)
  Burst length (1, 2, 4, 8)*1
  Data scramble (sequential, interleave)*1
    1: H version only.
•CBR auto-refresh, Self-refresh capability
•Package:
  50-pin 400 mil plastic TSOP (Type II)(TSOPII50-P-400-0.80-K)   (Product : MSM56V16160D/DH-xxTS-K)
                                                                                                     xx indicates speed rank.
 

MSM56V16160DH Connection Diagram

MSM56V16160DH  Connection DiagramMSM56V16160DH  Connection Diagram

MSM56V16160DH datasheet

MSM56V16160DH
PDF/DataSheet Download

  • Datasheet: MSM56V16160DH
  • File Size: 349565 KB
  • Manufacturer: OKI [OKI electronic componets]
  • Click here to Download

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