Purchase MSM56V16800F, In-stock MSM56V16800F From SeekIC.
Part Number: MSM56V16800F
Description: The MSM56V16800F is a 2-Bank *1,048,576-word* 8 bit Synchronous dynamic RAM, fabricated in OKI's...
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MSM56V16800F
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DataSheet
General Description
MSM56V16800F General Description
The MSM56V16800F is a 2-Bank *1,048,576-word * 8 bit Synchronous dynamic RAM, fabricated in OKI's CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.
MSM56V16800F Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit |
| Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to VCC +0.5 |
V |
| VCC Supply Voltage |
VCC, VCCQ |
-0.5 to 4.6 |
V |
| Storage Temperature |
Tstg |
-55 to 150 |
°C |
| Power Dissipation |
PD* |
600 |
mW |
| Short Circuit Current |
IOS |
50 |
mA |
| Operating Temperature |
Topr |
0 to 70 |
°C |
*: Ta = 25°C
MSM56V16800F Features
Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell
2-bank *1,048,576-word *8bit configuration
3.3V power supply ± 0.3V tolerance
Input : LVTTL compatible
Output : LVTTL compatible
Refresh : 4096 cycles/64 ms
Programmable data transfer mode
-CAS Latency (1,2,3)
- Burst Length (1,2,4,8,Full page)
-Data scramble (sequential , interleave)
CBR auto-refresh, Self-refresh capability
Package:
44-pin 400mil plastic TSOP (Type II)(TSOPII44-P-400-0.80-K)(Product : MSM56V16800F-xxTS-K)
xx : indicates speed rank.
2-bank *1,048,576-word *8bit configuration
3.3V power supply ± 0.3V tolerance
Input : LVTTL compatible
Output : LVTTL compatible
Refresh : 4096 cycles/64 ms
Programmable data transfer mode
-CAS Latency (1,2,3)
- Burst Length (1,2,4,8,Full page)
-Data scramble (sequential , interleave)
CBR auto-refresh, Self-refresh capability
Package:
44-pin 400mil plastic TSOP (Type II)(TSOPII44-P-400-0.80-K)(Product : MSM56V16800F-xxTS-K)
xx : indicates speed rank.
MSM56V16800F Connection Diagram
MSM56V16800F
PDF/DataSheet Download
- Datasheet: MSM56V16800F
- File Size: 3051254 KB
- Manufacturer: OKI [OKI electronic componets]
- Click here to Download
- ·MSM10S0000
- OKI [OKI electronic componets]
- 0.8um CMOS
- 48604 KB
- ·MSM13Q
- OKI [OKI electronic componets]
- 0.35 レm Sea of Gates Arrays
- 232838 KB
- ·MSM14Q000
- OKI [OKI electronic componets]
- 0.35 レm Sea of Gates Arrays
- 232838 KB
- ·MSM27C1602CZ
- OKI [OKI electronic componets]
- 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM
- 111107 KB
- ·MSM27C1652CZ
- OKI [OKI electronic componets]
- 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
- 93703 KB
- ·MSM27C1655CZ
- OKI [OKI electronic componets]
- 524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
- 93258 KB
- ·MSM27C3202CZ
- OKI [OKI electronic componets]
- 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM
- 89388 KB
- ·MSM27C3252CZ
- OKI [OKI electronic componets]
- 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
- 92532 KB
MSM56V16800F Relative Products
MSM56V16800E
The MSM56V16800E is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
MSM56V16800DH
The MSM56V16800DH is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
MSM56V16800D
The MSM56V16800D/DH is a 2-bank ×1,048,576-word ×8-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
MSM56V16400DH
The MSM56V16400DH is a 2-bank × 2,097,152-word × 4-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
MSM56V16400D
The MSM56V16400D/DH is a 2-bank × 2,097,152-word × 4-bit synchronous dynamic RAM,fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
MSM56V16160F
The MSM56V16160F is a 2-Bank *524,288-word*16 bit Synchronous dynamic RAM, fabricated in OKI's CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.
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