MT48LC4M4A2S-2

The Micron 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8 is a dual 1 Meg x 8) with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the two internal banks is organized with 2,048 rows and either 1,024 columns by 4 bits (4 Meg x 4) or 512 columns by 8 bits (2 Meg x 8).

Read and write accesses to the SDRAM are burst ori- ented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an AC- TIVE command, which is then followed by a READ or WRITE command. The address bits registered coinci- dent with the ACTIVE command are used to select the bank and row to be accessed (BA selects the bank, A0-A10 select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.