MT5C6401

ABSOLUTE MAXIMUM RATINGS*
Voltage on any Input Relative to Vss.............-2.0V to +7.0V
Voltage on Vcc Supply Relative to Vss............-1.0V to +7.0V
Voltage Applied to Q.......................................-1.0V to +7.0V
Storage Temperature...............................-65^oC to +150^oC
Power Dissipation............................................................1W
Max Junction Temperature......................................+175°C
Lead Temperature (soldering 10 seconds)...............+260^oC
Short Circuit Output Current........................................50mA

*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The Austin Semiconductor SRAM family MT5C6401 employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications, Austin Semiconductor MT5C6401 offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. The X1 configuration features separate data input and output.

Writing to these MT5C6401 is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements.

MT5C6401 operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.