Purchase MTB6N60E1, In-stock MTB6N60E1 From SeekIC.
D/C:9847
Part Number: MTB6N60E1
D/C: 9847
Description: This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. T...
- Table of contents:
MTB6N60E1
-
Suppliers
DataSheet
General Description
MTB6N60E1 General Description
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTB6N60E1 Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
600 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
600 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
6.0 4.6 18 |
Adc Apk |
| Total Power Dissipation @ 25 Derate above 25 Total Power Dissipation @ TA = 25 (1) |
PD |
125 1.0 2.5 |
Watts W/ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 ) |
EAS |
405 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1) |
RJC RJA RJA |
1.0 62.5 50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
MTB6N60E1 Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
MTB6N60E1
PDF/DataSheet Download
- Datasheet: MTB6N60E1
- File Size: 164421 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
- ·MTB001
- SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
- High Output Interface Driver ICs
- 363416 KB
- ·MTB011
- SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
- High Output Interface Driver ICs
- 362394 KB
- ·MTB10000
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-G
- MARKTECH [Marktech Corporate]
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-HR
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-O
- MARKTECH [Marktech Corporate]
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-RG
- MARKTECH [Marktech Corporate]
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-UR
- LED Lamp Arrays
- 70628 KB
MTB6N60E1 Relative Products
MTB6N60E
The MTB6N60Ehas the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. The MTB6N60Eis design...
MTB6N60D
The MTB6N60D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. The MTB6N60Dis desig...
MTB60N10E7
MTB60N06HD
The MTB60N06HD has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high...
MTB60N05HDL
The MTB60N05HDL has the capability of housing a larger die than any existing surface mount package which allowsMTB60N05HDL to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This adva...
MTB55N06Z
The MTB55N06Z is designed to withstand high energy in the avalanche mode and switch efficiently. The MTB55N06Zalso offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor...
Hotspot Suppliers Product
CD4508BE
Price: 0.8-1 USD
IC 4-BIT LATCH DUAL 24-DIP - CD4508BE
ISPLSI5384VA70LB272
Price: 9-10 USD
In-System Programmable 3.3V SuperWIDE™ High Density PLD BGA
LPC2106B
Price: 1-2 USD
Single-chip 32-bit microcontrollers; 128 kB ISP/IAP flash with 16/32/64 kB RAM
AT90CAN128-16AU
Price: 1-13 USD
low-power CMOS 8-bit microcontroller
XC2S200-5FGG456C
Price: 30-50 USD
FPGA, Spartan-II Family, , 263MHz, 0.18um, 2.5V, 456-Pin FBGA, Fully PCI compliant
BGY1816N
Price: 15-16 USD
three-stage, UHF amplifier module, SOT365A package with a plastic cap, three NPN silicon planar tr...
EP1C6Q240C8N
Price: 12.8-15 USD
field programmable gate, QFP240, -0.5 to 2.4V
TC4584BF
Price: 0.2-0.35 USD
6-circuit inverter, SOP, VSS - 0.5～VSS + 20 V
XC9536-15PCG44C
Price: 2.5-3 USD
Programmable CPLD, PLCC, 100 MHz
MLF2012AR10JT
Price: 0.0001-0.001 USD
Inductor, SMD, 0.1μH, High-reliability monolithic structure, high heat resistance
AD9260AS
Price: 25-46 USD
ADC, QFP, –0.3 to +6.5 V
ADC71K
Price: 0.1-0.2 USD
16-bit, analog-to-digital converter, 32-pin Hermetic Ceramic Package
