Purchase MTB6N60E1D, In-stock MTB6N60E1D From SeekIC.
Part Number: MTB6N60E1D
Description: This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. T...
- Table of contents:
MTB6N60E1D
-
Suppliers
DataSheet
General Description
MTB6N60E1D General Description
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTB6N60E1D Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
600 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
600 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
6.0 4.6 18 |
Adc Apk |
| Total Power Dissipation @ 25 Derate above 25 Total Power Dissipation @ TA = 25 (1) |
PD |
125 1.0 2.5 |
Watts W/ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 ) |
EAS |
405 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1) |
RJC RJA RJA |
1.0 62.5 50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
MTB6N60E1D Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
MTB001
PDF/DataSheet Download
- Datasheet: MTB001
- File Size: 363416 KB
- Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
- Click here to Download
- ·MTB011
- SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
- High Output Interface Driver ICs
- 362394 KB
- ·MTB10000
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-G
- MARKTECH [Marktech Corporate]
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-HR
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-O
- MARKTECH [Marktech Corporate]
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-RG
- MARKTECH [Marktech Corporate]
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-UR
- LED Lamp Arrays
- 70628 KB
- ·MTB10000-Y
- LED Lamp Arrays
- 70628 KB
MTB6N60E1D Relative Products
MTB6N60E1
This MTB6N60E1 is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supp...
MTB6N60E
The MTB6N60Ehas the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. The MTB6N60Eis design...
MTB6N60D
The MTB6N60D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. The MTB6N60Dis desig...
MTB60N10E7
MTB60N06HD
The MTB60N06HD has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high...
MTB60N05HDL
The MTB60N05HDL has the capability of housing a larger die than any existing surface mount package which allowsMTB60N05HDL to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This adva...
Hotspot Suppliers Product
FHC40LG
Price: 5-7 USD
High Electron Mobility Transistor, 3.5 V, 290 mW, Gold Gate Metallization
ICL8069
Price: 0.3-0.5 USD
reference, SOP, 10mA, Low Voltage Reference, 1.2V, temperature-compensated
OPT101P
Price: 4.16-4.5 USD
Optoelectronic Products - Light to Voltage - OPT101
BD9897FS
Price: 2-3.08 USD
DC-AC Inverter Control IC, Silicon Monolithic Integrated Circuit, STB voltage
BTS5210G
Price: 0.65-0.75 USD
SOP, Smart high-side power switch, Two channels 2 x 140mΩ, Status feedback, Vbb 36V
TNY279PN TNY279PG
Price: 0.2-1.19 USD
energy efficient, off-line switcher, -0.3 V to 700 V, 100 mA, Very low component count
LTC1487CS8
Price: 0.75-0.85 USD
Ultra-Low Power, transceiver
BSS84LT1G
Price: 0.01-0.05 USD
SOT-23, 130 mA, 50 V, power MOSFET, 225 mW, Energy Efficient
6250PG
Price: 2-5 USD
6250PG, SOP, Infineon Technologies AG
SED1330FBA
Price: 0.1-100 USD
versatile LCD controller IC, QFP, –0.3 to 7.0 V, 300 mW, SED1330FBA, Epson
TNY176PN
Price: 0.2-0.69 USD
Switcher, 650 V, 880 (1650) mA
2SC3200-BL
Price: 0.3-0.55 USD
silicon NPN transistor, epitaxial planar type, TO-92, 2SC3200-BL, high breakdown voltage, 120V
