MFG:ON Package Cooled:05+ D/C:TO-252
MFG: ON
Package Cooled: 05+
D/C: TO-252
Description: This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode and switch...
This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode and switch efficiently. This new high energy device also offers a gatetosource zener diode designed for 4 kV ESD protection (human body model).
• ESD Protected
• 4 kV Human Body Model
• 400 V Machine Model
• Avalanche Energy Capability
• Internal SourceToDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
60 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp±50ms) |
VGS VGSM |
±15 ±20 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse (tp10 s) |
ID ID IDM |
12 7.1 36 |
Adc Apk |
| Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size |
PD |
45 0.36 1.75 |
Watts W/°C Watts |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25) |
EAS |
72 |
mJ |
| Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient - JunctiontoAmbient(1) |
RJC RJA RJA |
2.78 100 71.4 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |
MTD12N06EZL
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