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MFG:ON
Part Number: MTD1312
MFG: ON
Description: This advanced HDTMOS1A power FET is designed to withstand high energy in the avalanche and commutation...
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MTD1312
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DataSheet
General Description
MTD1312 General Description
This advanced HDTMOS1A power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode Is Characterized for Use In Bridge Circuits
• Surface Mount Package Available in 16 mm, 13, / 2500 Unit Tape & Reel, Add "T4" Suffix to Part Number
MTD1312 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
30 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
30 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
±20 ± 20 |
Vdc Vpk |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 15 |
°C |
MTD1312
PDF/DataSheet Download
- Datasheet: MTD1312
- File Size: 36866 KB
- Manufacturer: ON SEMICONDUCTOR
- Click here to Download
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