MFG:ON Package Cooled:05+ D/C:TO-252
MFG: ON
Package Cooled: 05+
D/C: TO-252
Description: This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently....
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
500 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
500 |
Vdc |
| GatetoSource Voltage - Continuous - Single Pulse (tp 50 ms) |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
| Drain Current - Continuous @ TC = 25°C - Continuous @ @ TC = 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
1.0 0.8 4.0 |
Adc Apk |
| Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C, when mounted to minimum recommended pad size |
PD |
50 0.4 1.75 |
Watts W/°C Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
MTD1P50E
PDF/DataSheet Download
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