MTP10N40 Selling Leads, Price trend, MTP10N40 DataSheet download, circuit diagram from SeekIC.com

Features: • Avalanche Energy Capability Specified at Elevated Temperature• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode• SourcetoDrain Diode R...

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MTP10N40: Features: • Avalanche Energy Capability Specified at Elevated Temperature• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External...

MTP10N40 Data Sheet

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Part Number:: MTP10N40
Supply Ability:: 5000

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Upload time: 2024/4/27

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Features: • Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppre...

Product Details

Description

Features:

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode

Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	400	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	400	Vdc
GatetoSource Voltage - Continuous - Nonrepetitive	V_GS V_GSM	±20 ±40	Vdc Vpk
Drain Current - Continuous - Pulsed	I_D I_DM	10 40	Adc
Total Power Dissipation Derate above 25°C	P_D	125 1.0	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	65 to 150	°C

Description

The MTP10N40 is designed to withstand high energy in the avalanche mode and switch efficiently. The MTP10N40 also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

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MTP10N40

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