MFG:MOTOROLA Package Cooled:02+ D/C:220
MFG: MOTOROLA
Package Cooled: 02+
D/C: 220
Description: This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and sw...
This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
400 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
400 |
Vdc |
| GatetoSource Voltage - Continuous - Nonrepetitive |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
| Drain Current - Continuous - Pulsed |
ID IDM |
10 40 |
Adc |
| Total Power Dissipation Derate above 25°C |
PD |
125 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
65 to 150 |
°C |
MTP10N40
PDF/DataSheet Download
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