Position: Home > Datasheet list > MTP Series > Index M > MTP12N10E
Electronica China

Purchase MTP12N10E, In-stock MTP12N10E From SeekIC.

MFG:MOTOROLA  Package Cooled:00+  D/C:220  

MTP12N10E Product Image

MTP Series Datasheet download

Five Points

Part Number: MTP12N10E

 

MFG: MOTOROLA

Package Cooled: 00+

D/C: 220

Description: This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. T...


Urgent Purchase

MTP12N10E General Description


This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP12N10E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
100
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
GatetoSource Voltage
- Continuous
- Single Pulsed (tp 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
- Continuous
-Single Pulsed (tp 10 s)
ID
IDM
12
30
Adc

Total Power Dissipation @ TC= 25°C
Derate above 25°C
PD
79
0.53
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C

MTP12N10E Features

• Designed to Eliminate the Need for External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP12N10E datasheet

MTP12N10E
PDF/DataSheet Download

Find MTP12N10E Suppliers

  • ·MTP 3-Phase Rectifier Series
  •  
  • THREE PHASE BRIDGE Power Module 
  • 124897 KB
  • MTP 3-Phase Rectifier Series Datasheet Download
  • ·MTP10N06
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N06 Datasheet Download
  • ·MTP10N10
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N10 Datasheet Download
  • ·MTP10N10E
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM 
  • 243664 KB
  • MTP10N10E Datasheet Download
  • ·MTP10N10E/D
  •  
  • TMOS POWER FETs 10 AMPERES 100 VOLTS 
  • 208450 KB
  • MTP10N10E/D Datasheet Download
  • ·MTP10N10EL
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS 
  • 226684 KB
  • MTP10N10EL Datasheet Download
  • ·MTP10N10EL/D
  •  
  • TMOS POWER FET 10 AMPERES 100 VOLTS 
  • 226684 KB
  • MTP10N10EL/D Datasheet Download
  • ·MTP10N15
  • MOTOROLA [Motorola, Inc] 
  • POWER FIELD EFFECT TRANSISTOR 
  • 174376 KB
  • MTP10N15 Datasheet Download

Related Part Number

MTP12N10E Relative Products

  • MTP12N06EZL

    MTP12N06EZL

  • MTP12N06

    MTP12N06

    The MTP12N06is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a gatetosource zener diode designed for 4 kV ESD protection (human body model).

  • MTP1149

    MTP1149

    SWITCH TACT

  • MTP10N60E7

    MTP10N60E7

  • MTP10N40E

    MTP10N40E

    The MTP10N40Eis designed to withstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power s...

  • MTP10N40

    MTP10N40

    The MTP10N40is designed to withstand high energy in the avalanche mode and switch efficiently. The MTP10N40also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM mot...

Hotspot Suppliers Product

Product List

  • Models: BTS3408G Price: 1-10 USD

    BTS3408G

    Price: 1-10 USD

    Low-Side Switch, PDSO-8, 4.5 V ~ 60 V, 480 mOhm, 550mA, BTS3408G

  • Models: 4N33-X009T Price: 0.1-100 USD

    4N33-X009T

    Price: 0.1-100 USD

    SMD, optically coupled isolator, Lead-free component, 10Ω, Integrated Circuits, Vishay Siliconix

  • Models: ISO150AP Price: 26-28 USD

    ISO150AP

    Price: 26-28 USD

    Bi-Directional digital coupler, 24-DIP, 500kV/μs, –0.5 to 6V, ISO150AP

  • Models: BLF871 Price: 78-85 USD

    BLF871

    Price: 78-85 USD

    LDMOS RF power transistor, SOT467C, 100 W, -0.5 to +13 V

  • Models: AD7708BRUZ Price: 4.2-4.5 USD

    AD7708BRUZ

    Price: 4.2-4.5 USD

    8-Channel, Low Voltage, Low Power, ADC, Single Conversion Cycle Setting, TSOP-28

  • Models: CA3081M Price: 0.5-2 USD

    CA3081M

    Price: 0.5-2 USD

    NPN Transistor Array, SOP, 100mA

  • Models: G2R-1-F-12VDC Price: 1.165-1.196 USD

    G2R-1-F-12VDC

    Price: 1.165-1.196 USD

    Power Relay, 12 VAC, High-sensitivity, high-capacity, Double-winding latching type

  • Models: MAX3430ESA Price: 0.84-0.9 USD

    MAX3430ESA

    Price: 0.84-0.9 USD

    1/4-Unit Load, +3.3V, RS-485 Transceiver, 471mW, ±80V Fault Protection, Internal Slew-Rate Limiting

  • Models: MC68HC811E2CFN2 Price: 0.1-0.1 USD

    MC68HC811E2CFN2

    Price: 0.1-0.1 USD

    Programming Reference Guide, QFP, -0.3 to +7.0 V Supply voltage, 25 mA, Real-time interrupt circuit

  • Models: DCP010505DBP Price: 4.61-4.76 USD

    DCP010505DBP

    Price: 4.61-4.76 USD

    Miniature, 1W Isolated unregulated dc/dc converter, DIP-14, Thermal Protection

  • Models: PIC16F676-I/P Price: 1-10 USD

    PIC16F676-I/P

    Price: 1-10 USD

    DIP-14, FLASH-Based, 8-Bit CMOS Microcontrollers, Microchip Technology, -0.3 to +6.5V

  • Models: 73K302L-IH Price: 1.5-1.8 USD

    73K302L-IH

    Price: 1.5-1.8 USD

    single-chip modem IC, PLCC28, 7V

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All