Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 15 V
Package / Case
: TO-220AB
Continuous Drain Current
: 12 A
Drain-Source Breakdown Voltage
: 60 V
Resistance Drain-Source RDS (on)
: 0.18 Ohms
Features: • Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFETSpecifications
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
GatetoSource Voltage - Continuous
- NonRepetitive (tp 50 ms) |
VGS
VGSM
|
±15
± 20
|
Vdc
Vpk
|
Drain Current - Continuous @ 25°C
- Continuous @ 100°C
- Single Pulse (tp 10 s) |
ID
ID
IDM |
12
8.0
42 |
Adc
|
Total Power Dissipation@ 25°C
Derate above 25°C |
PD |
48
0.32 |
Watts
W/°C
|
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25 Vdc, VGS = 5.0Vdc, PEAK IL =12Apk, L = 1.0mH, RG = 25) |
EAS |
72 |
mJ |
Thermal Resistance - Junction to Case
- Junction to Ambient |
RJC
RJA |
3.13
62.5 |
°C/W
|
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.DescriptionMTP3055VL is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTP3055VL is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, the MTP3055VL is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Parameters: | Technical/Catalog Information | MTP3055VL |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 6A, 5V |
| Input Capacitance (Ciss) @ Vds | 570pF @ 25V |
| Power - Max | 48W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 10nC @ 5V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MTP3055VL
MTP3055VL
MTP3055VLFS ND
MTP3055VLFSND
MTP3055VLFS
|
MTP3055VL Data Sheet
