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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: MTP50N06VL

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

 

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MTP50N06VL Maximum Ratings

Rating
Symbol
Value
Unit
DrainSource Voltage
VGSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp10ms)

VGS
VGSM

±15
±20


Vdc
Vpk

Drain - Continuous @ 25°C
- Continuous @ 100°C
- Single Pulse(tp10 s)
ID
ID
IDM
42
30
147

Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
125
0.83
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 175
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5 Vdc, PEAK IL = 42 Apk, L = 0.3 mH, RG = 25)
EAS
265
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
1.2
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260
°C

MTP50N06VL Features

New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET

MTP50N06VL datasheet

MTP50N06VL
PDF/DataSheet Download

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Related Part Number

MTP50N06VL Relative Products

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