MTP50P03HDL

Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 25 mOhms at 5 V


Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	30	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	30	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	± 15 ± 20	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	50 31 150	Adc Apk
Total Power Dissipation Derate above 25°C	PD	125 1.0	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 5.0Vdc, Vdc,Peak IL =50Apk, L = 1.0mH, RG = 25)	EAS	1250	mJ
Thermal Resistance - Junction to Case - Junction to Ambient ,when mounted with the minimum recommended pad size	RJC RJA	1.0 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

Designer's, EFET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The MTP50P03HDL also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP50P03HDL is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.


Parameters:

Technical/Catalog Information	MTP50P03HDL
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	25 mOhm @ 25A, 5V
Input Capacitance (Ciss) @ Vds	4900pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	100nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MTP50P03HDL MTP50P03HDL MTP50P03HDLOS ND MTP50P03HDLOSND MTP50P03HDLOS