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Part Number: MTP50P03HDL

 

MFG: ON

Package Cooled: TO220AB

D/C: 08+

Description: This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation m...


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MTP50P03HDL General Description


This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP50P03HDL Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 15
± 20
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
50
31
150
Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
125
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25Vdc,VGS = 5.0Vdc, Vdc,Peak IL =50Apk, L = 1.0mH, RG = 25)
EAS
1250
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient ,when mounted with the minimum recommended pad size
RJC
RJA
1.0
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

Designer's, EFET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP50P03HDL Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP50P03HDL datasheet

MTP50P03HDL
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