MFG:MOTOROLA Package Cooled:02+ D/C:220
MFG: MOTOROLA
Package Cooled: 02+
D/C: 220
Description: TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. Thi...
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
±15 ± 20 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
52 41 182 |
Adc APK |
| Total Power Dissipation@ 25°C Derate above 25°C |
PD |
188 1.25 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 5Vdc, PEAK IL =52Apk, L = 0.3mH, RG = 25) |
EAS |
406 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.8 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
MTP52N06VL
PDF/DataSheet Download
MTP52N06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTP5...
This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The MTP50P03HDL also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applicati...
MTP50N06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTP5...
The MTP50N06ELis designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power suppl...
MTP50N06 is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTP50...
Price: 0.11-0.14 USD
silicon Epitaxial-Base NPN power transistor, 100 V, 125 W, 20 A, monolithic darlington configurati...
Price: 1-10 USD
16Mbit Serial Flash Memory, 50 MHz SPI Bus Interface, Sector Erase (512 Kbit)
Price: 3.5-5.2 USD
PW131A-20Q, QFP, pixelworks, Inc
Price: 22-39 USD
3.5 inch LCD module, -5.8 to -5.2V, 30mA, Low Temperature Poly Silicon, TFT technology
Price: 1.03-1.11 USD
8-bit, high-speed, analog-to-digital converters, TSSOP, 5V Single-Supply Operation, 7 V Supply vol...
Price: 3.1-6.3 USD
12-bit, analog-to-digital converters, serial control, 11 analog inputs, soic-20, 3 Built-In Self-T...
Price: 1-1000000 USD
transceiver, 12V, 38TSSOP, EMI-/EMC-Compliant, 615 kV, ESD Protected, Dual RS-232 Port
Price: 0.2-0.8 USD
IC HIGH SPEED PWM CONT 16-SOIC - UC3825DW
Price: 0.95-1.45 USD
IC OFFLINE SWIT PWM OCP HV TO220 - TOP222YN
Price: 3-4 USD
Single, Dual, Quad operational amplifier, TSSOP-14, 14 V, low distortion, large bandwidth
Price: 5.99-6.3 USD
LQFP-100, 32-Bit CPU, 64KB, High-Performance, JTAG Boundary Scan Support, digital signal processor
Price: 0.23-0.25 USD
45W, HEXFET power MOSFET, 55V, Single P-Channel, -48A, fast switching, ±20V
