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Part Number: MTP55N06

 

MFG: MOT/ON

Package Cooled: TO

 

Description: This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently....


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MTP55N06 General Description


This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTP55N06 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
±20
± 40
Vdc
Vpk
Drain Current - Continuous @TC= 25°C
- Continuous @ TC=100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
55
35.5
165
Adc

Apk

Total Power Dissipation@TC= 25°C
Derate above 25°C
PD
113
0.91
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25 Vdc, VDS =60Vdc,VGS = 10Vdc, PEAK IL =55Apk, L = 0.3mH, RG = 25)
EAS
454
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
1.1
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP55N06 Features

• Avalanche Energy Capability Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model.

MTP55N06 datasheet

MTP55N06
PDF/DataSheet Download

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