MFG:MOT/ON Package Cooled:TO
MFG: MOT/ON
Package Cooled: TO
Description: This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche ...
This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies,converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VDSS |
50 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
50 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±15 ±20 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse(tp10 s) |
ID ID IDM |
60 42 180 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
150 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 175 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25) |
EAS |
540 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.0 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
°C |
MTP60N05HDL
PDF/DataSheet Download
The MTP60N05is designed to withstand high energy in the avalanche and commutation modes. The MTP60N05 also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and P...
MTP5P06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTP5P...
The MTP5N40Eis designed to withstand high energy in the avalanche mode and switch efficiently. The MTP5N40E also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM mo...
The MTP5N20 is a kind of TMOS field effect transistor. It is N-channel enhancement-mode. The device is intended for high voltage, high speed power switching applications such as power switching regulators, converters, solenoid and relay drivers. There are so...
The MTP55N06Z is designed to withstand high energy in the avalanche mode and switch efficiently.The MTP55N06Zalso offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor ...
The MTP55N06is designed to withstand high energy in the avalanche mode and switch efficiently. This MTP55N06 also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor ...
Price: 0.75-3 USD
UHF receiver front-end, SOP14, -0.5 to 7 VDC
Price: 1-2 USD
nine-port managed 10/100 switch, QFP, MAC based trunking, BCM5335MKQM
Price: 0.14-0.16 USD
3W, stereo, avoid voice distortion, without output filter, SOP16\DIP16, -0.3 to VCC + 0.3V
Price: 0.01-1 USD
surface mount multilayer, ceramic chip capacitor, General purpose dielectric, 1000 Vdc, 1 kHz
Price: 1-10 USD
microprocessor supervisory circuit, DIP, 0.3V to +6.0V, 20mA, 471mW, Precision Voltage Monitor
Price: 1-10 USD
SOT115J, CATV amplifier module, NXP Semiconductors, 30V, 70 dBmV, Silicon nitride passivation
Price: 0.001-0.002 USD
Murata Multilayer Ceramic Capacitors, 10000PF, 50V, High Dielectric Constant Type
Price: 1-2 USD
150 kHz, 3A, Step-Down Voltage Regulator, Step-Down type (Buck), TO-263-7
Price: 7-15 USD
64kbit Memory iButton, rugged read/write data carrier, 65536 bits, -0.5V to +7.0V
Price: 0.022-0.029 USD
NPN Silicon Epitaxial Transistor, TO-92, 0.15A
Price: 15.5-17.5 USD
system-on-a-chip, 272TFBGA, 200MHz, 1.65 V ~ 3.6 V, EP9307-CRZ
Price: 1-4 USD
SOP20 , Octal buffer/line driver, 3-state, high-speed, Si-gate CMOS device, low power Schottky TTL...
