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Part Number: MTP60N05HDL

 

MFG: MOT/ON

Package Cooled: TO

 

Description: This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche ...


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MTP60N05HDL General Description


This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies,converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP60N05HDL Maximum Ratings

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
50
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
50
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp10ms)

VGS
VGSM

±15
±20


Vdc
Vpk

Drain - Continuous
- Continuous @ 100°C
- Single Pulse(tp10 s)
ID
ID
IDM
60
42
180

Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
150
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 175
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25)
EAS
540
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260
°C

MTP60N05HDL datasheet

MTP60N05HDL
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