MFG:MOT/ON Package Cooled:TO
MFG: MOT/ON
Package Cooled: TO
Description: This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation m...
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
50 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
50 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 15 ± 20 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ @TC=100°C - Single Pulse (tp 10 s) |
ID ID IDM |
60 42 180 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
150 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 10Vdc, Vdc,Peak IL =60Apk, L = 0.3mH, RG = 25) |
EAS |
540 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.0 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
MTP60N05
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