Position: Home > Datasheet list > MTP Series > Index M > MTP60N06
Electronica China

Purchase MTP60N06, In-stock MTP60N06 From SeekIC.

Package Cooled:TO-3P  D/C:09+  

MTP60N06 Product Image

MTP Series Datasheet download

Five Points

Part Number: MTP60N06

 

 

Package Cooled: TO-3P

D/C: 09+

Description: This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation m...


Urgent Purchase

MTP60N06 General Description


This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP60N06 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 30
Vdc
Vpk
Drain Current - Continuous
- Continuous @ @TC=100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
60
42.3
180
Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
150
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25Vdc,VGS = 10Vdc, Vdc,Peak IL =60Apk, L = 0.3mH, RG = 25)
EAS
540
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
1.0
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET, Designer's and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP60N06 Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP60N06 datasheet

MTP60N06
PDF/DataSheet Download

Find MTP60N06 Suppliers

  • ·MTP 3-Phase Rectifier Series
  •  
  • THREE PHASE BRIDGE Power Module 
  • 124897 KB
  • MTP 3-Phase Rectifier Series Datasheet Download
  • ·MTP10N06
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N06 Datasheet Download
  • ·MTP10N10
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 11 A, 60-100 V 
  • 170679 KB
  • MTP10N10 Datasheet Download
  • ·MTP10N10E
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM 
  • 243664 KB
  • MTP10N10E Datasheet Download
  • ·MTP10N10E/D
  •  
  • TMOS POWER FETs 10 AMPERES 100 VOLTS 
  • 208450 KB
  • MTP10N10E/D Datasheet Download
  • ·MTP10N10EL
  • MOTOROLA [Motorola, Inc] 
  • TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS 
  • 226684 KB
  • MTP10N10EL Datasheet Download
  • ·MTP10N10EL/D
  •  
  • TMOS POWER FET 10 AMPERES 100 VOLTS 
  • 226684 KB
  • MTP10N10EL/D Datasheet Download
  • ·MTP10N15
  • MOTOROLA [Motorola, Inc] 
  • POWER FIELD EFFECT TRANSISTOR 
  • 174376 KB
  • MTP10N15 Datasheet Download

Related Part Number

MTP60N06 Relative Products

  • MTP60N05HDL

    MTP60N05HDL

    The MTP60N05HDLis designed to withstand high energy in the avalanche and commutation modes. The MTP60N05HDL also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies,converters ...

  • MTP60N05

    MTP60N05

    The MTP60N05is designed to withstand high energy in the avalanche and commutation modes. The MTP60N05 also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and P...

  • MTP5P06V

    MTP5P06V

    MTP5P06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTP5P...

  • MTP5N40E

    MTP5N40E

    The MTP5N40Eis designed to withstand high energy in the avalanche mode and switch efficiently. The MTP5N40E also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM mo...

  • MTP5N20

    MTP5N20

    The MTP5N20 is a kind of TMOS field effect transistor. It is N-channel enhancement-mode. The device is intended for high voltage, high speed power switching applications such as power switching regulators, converters, solenoid and relay drivers. There are so...

  • MTP55N06Z

    MTP55N06Z

    The MTP55N06Z is designed to withstand high energy in the avalanche mode and switch efficiently.The MTP55N06Zalso offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor ...

Hotspot Suppliers Product

Product List

  • Models: MPSA56 Price: 0.08-1 USD

    MPSA56

    Price: 0.08-1 USD

    Amplifier Transistor, TO-92, 625mW

  • Models: DS3234S# Price: 3.5-6 USD

    DS3234S#

    Price: 3.5-6 USD

    RTC, 20-SOIC, -0.3V to +6.0V

  • Models: SKM100GB12T4 Price: 28-28.5 USD

    SKM100GB12T4

    Price: 28-28.5 USD

    Fast IGBT4 Modules, 1200V, 160A, 10μs, High short circuit capability

  • Models: LS06 Price: 0.3-0.85 USD

    LS06

    Price: 0.3-0.85 USD

    Buffer/Driver 6-CH Inverting Open Collector Bipolar 14-Pin SOIC Tube

  • Models: HFBR-1532 Price: 7-9 USD

    HFBR-1532

    Price: 7-9 USD

    fiber optic link, DIP, 1000mA

  • Models: L7805C2T Price: 1-2 USD

    L7805C2T

    Price: 1-2 USD

    L7805C2T

  • Models: MMSD4148T1G Price: 0.5-10 USD

    MMSD4148T1G

    Price: 0.5-10 USD

    switching diode, SOD-123, Pb-Free

  • Models: CC1020 Price: 2.3-4 USD

    CC1020

    Price: 2.3-4 USD

    Single Chip, Low Power, RF Transceiver, VQFN, 2.3 V to 3.6 V supply voltage, Low-IF receiver

  • Models: LP3878MR-ADJ Price: 0.25-0.35 USD

    LP3878MR-ADJ

    Price: 0.25-0.35 USD

    800 mA, adjustable output voltage regulator, 1.0V to 5.5V, 8 Lead PSOP

  • Models: RA60H1317M1A Price: 31.7-45 USD

    RA60H1317M1A

    Price: 31.7-45 USD

    RF MOSFET Amplifier Module, 136-174MHz, 60W, 12.5V, RoHS Compliance

  • Models: LT1097CN8 Price: 1.3-2 USD

    LT1097CN8

    Price: 1.3-2 USD

    DIP8, 50μV, thermocouple amplifier

  • Models: KBU8K Price: 0.39-0.45 USD

    KBU8K

    Price: 0.39-0.45 USD

    bridge rectifier, DIP4, gle-phase

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All