Purchase MTP60N10E7, In-stock MTP60N10E7 From SeekIC.
- Table of contents:
MTP60N10E7
-
Suppliers
DataSheet
General Description
MTP60N10E7 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VDSS |
100 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±20 ±30 |
|
| Drain - Continuous - Continuous - Single Pulse(tp10 s) |
ID ID IDM |
60 48 210 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
242 1.61 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 175 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 75 V, VGS = 10 Vdc, IL = 60 A, L = 0.3 mH, RG = 25) |
EAS |
540 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.62 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
°C |
MTP60N10E7 Features
New Features of TMOS 7
• Ultra Low OnResistance Provides Higher Efficiency
• Reduced Gate Charge
Features Common to TMOS 7 and TMOS EFETS
• Avalanche Energy Specified
• Diode Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Ultra Low OnResistance Provides Higher Efficiency
• Reduced Gate Charge
Features Common to TMOS 7 and TMOS EFETS
• Avalanche Energy Specified
• Diode Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MTP60N10E7
PDF/DataSheet Download
- Datasheet: MTP60N10E7
- File Size: 188252 KB
- Manufacturer:
- Click here to Download
- ·MTP 3-Phase Rectifier Series
- THREE PHASE BRIDGE Power Module
- 124897 KB
- ·MTP10N06
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 11 A, 60-100 V
- 170679 KB
- ·MTP10N10
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 11 A, 60-100 V
- 170679 KB
- ·MTP10N10E
- MOTOROLA [Motorola, Inc]
- TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
- 243664 KB
- ·MTP10N10E/D
- TMOS POWER FETs 10 AMPERES 100 VOLTS
- 208450 KB
- ·MTP10N10EL
- MOTOROLA [Motorola, Inc]
- TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS
- 226684 KB
- ·MTP10N10EL/D
- TMOS POWER FET 10 AMPERES 100 VOLTS
- 226684 KB
- ·MTP10N15
- MOTOROLA [Motorola, Inc]
- POWER FIELD EFFECT TRANSISTOR
- 174376 KB
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