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D/C:07+
Part Number: MTP75N03HDL
D/C: 07+
Description: This advanced highcell density HDTMOS EFET is designed to withstand high energy in the avalanche and commutation modes....
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MTP75N03HDL
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DataSheet
General Description
MTP75N03HDL General Description
This advanced highcell density HDTMOS EFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for lowvoltage, highspeed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
MTP75N03HDL Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
25 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
25 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 15 ± 20 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
75 59 225 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
150 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 5.0Vdc, Vdc,Peak IL =75Apk, L = 0.1mH, RG = 25) |
EAS |
1250 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient ,when mounted with the minimum recommended pad size |
RJC RJA |
1.0 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
EFET and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
MTP75N03HDL Features
• Ultra Low RDS(on), HighCell Density, HDTMOS
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
MTP75N03HDL
PDF/DataSheet Download
- Datasheet: MTP75N03HDL
- File Size: 241193 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
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