MTP75N05HD General Description
This advanced highcell density HDTMOS EFET is designed to withstand high energy in the avalanche and commutation modes. This new energyefficient design also offers a draintosource diode with a fast recovery time. Designed for lowvoltage, highspeed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
MTP75N05HD Maximum Ratings
MTP75N05HD Features
• Ultra Low RDS(on), HighCell Density, HDTMOS
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• Diode Exhibits High Speed, Yet Soft Recovery
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
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