Transistors Switching (Resistor Biased) 100mA 50V BRT Dual
MUN5215DW1T1: Transistors Switching (Resistor Biased) 100mA 50V BRT Dual
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Transistors Switching (Resistor Biased) 100mA 50V BRT Dual PNP
| Configuration : | Dual | Transistor Polarity : | NPN |
| Typical Input Resistor : | 10 KOhms | Mounting Style : | SMD/SMT |
| Package / Case : | SOT-363-6 | Collector- Emitter Voltage VCEO Max : | 50 V |
| Continuous Collector Current : | 0.1 A | Peak DC Collector Current : | 100 mA |
| Power Dissipation : | 187 mW | Maximum Operating Temperature : | + 150 C |
| Packaging : | Reel |
|
Rating |
Symbol |
Value |
Unit |
| Collector-Base Voltage |
VCBO |
50 |
Vdc |
| Collector-Emitter Voltage |
VCEO |
50 |
Vdc |
| Collector Current |
IC |
100 |
mAdc |
The MUN5215DW1T1 BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5215DW1T1 series, two BRT devices are housed in the SOT?363 package which is ideal for low power surface mount applications where board space is at a premium.