MW6S004NT1

The MW6S004NT1 is designed as one kind of 746 to 960 MHz, 30 W, 26 to 28 V RF LDMOS wideband integrated power amplifier with 450 to 1500 MHz, 10 W, 28 V. Features of this device are:(1)capable of handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 watts CW output power; (2)characterized with series equivalent large-signal impedance parameters; (3)on-chip matching (50 ohm input, DC blocked, >4 ohm output); (4)integrated quiescent current temperature compensation with enable/disable function; (5)on-chip current mirror gm reference FET for self biasing application; (6)integrated ESD protection; (7)N suffix indicates lead-free terminations; (8)200 capable plastic package; (9)also available in gull wing for surface mount; (10)in tape and reel. R1 suffix = 500 units per 44 mm, 13 inch reel.

The absolute maximum ratings of the MW6S004NT1 can be summarized as:(1)Drain-Source Voltage: -0.5 to +65 Vdc;(2)Gate-Source Voltage: -0.5 to +15 Vdc;(3)torage Temperature Range: -65 to +175 °C;(4)Operating Junction Temperature: 200 °C;(6)Thermal Resistance, Junction to Case Temperature 80°C, 10 W PEP: 1.4 to 6.5 °C/W.

The electrical characteristics of this device can be summarized as:(1)Power Gain: 28 to 31 dB;(2)Power Added Efficiency: 18 to 21 %;(3)Input Return Loss (f = 880 MHz): -12 to -9 dB;(4)Adjacent Channel Power Ratio: -52 to -48 dBc;(5)Part-to-Part Phase Variation @ Pout = 5 W CW: ±15;(6)Delay @ Pout = 5 W CW Including Output Matching: 3 ns;(7)Deviation from Linear Phase in 80 MHz Bandwidth @ Pout = 5 W CW: 0.6;(8)Gain Flatness in 80 MHz Bandwidth @ Pout = 5 W CW: 0.3 dB. If you want to know more information about the MW6S004NT1, please download the datasheet in www.seekic.com or www.chinaicmart.com .