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MW6S010GNR1

Transistors RF MOSFET Power HV6 900MHZ 10W

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SeekIC No. : 00219573 Detail

MW6S010GNR1: Transistors RF MOSFET Power HV6 900MHZ 10W

MW6S010GNR1 Data Sheet

floor Price/Ceiling Price

US $ 5.24~5.24 / Piece | Get Latest Price
Part Number:
MW6S010GNR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~386
  • 386~500
  • Unit Price
  • $5.24
  • $5.24
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.5 GHz Gain : 18 dB at 960 MHz
Output Power : 10 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : 12 V Maximum Operating Temperature : + 150 C
Package / Case : TO-270-2 Gull Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : 12 V
Package / Case : TO-270-2 Gull
Frequency : 1.5 GHz
Gain : 18 dB at 960 MHz
Output Power : 10 W


Features:

• Typical Two-Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ =
125 mA, Pout = 10 Watts PEP
Power Gain- 18 dB
Drain Efficiency- 32%
IMD- -37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200 Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.




Specifications

Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5. +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Total Device Dissipation @ TC = 25
Derate above 25
PD
61.4
0.35
W
W/
Storage Temperature Range
Tstg
-65 to +175
Operating Junction Temperature
TJ
200





Description

Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. MW6S010GNR1 is suitable for analog and digital modulation and multicarrier amplifier applications.






Parameters:

Technical/Catalog InformationMW6S010GNR1
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating125mA
Package / CaseTO-270-2 Gull Wing
PackagingTape & Reel (TR)
Drawing Number375; 1265A-02; GNR; 2
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MW6S010GNR1
MW6S010GNR1



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