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Part Number: MW6S010GNR1

 

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Description: Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable f...


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MW6S010GNR1 General Description


Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

MW6S010GNR1 Maximum Ratings

Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5. +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Total Device Dissipation @ TC = 25
Derate above 25
PD
61.4
0.35
W
W/
Storage Temperature Range
Tstg
-65 to +175
Operating Junction Temperature
TJ
200

MW6S010GNR1 Features

• Typical Two-Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ =
      125 mA, Pout = 10 Watts PEP
      Power Gain - 18 dB
      Drain Efficiency - 32%
      IMD - -37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW  Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200 Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

MW6S010GNR1 datasheet

MW6S010GNR1
PDF/DataSheet Download

  • Datasheet: MW6S010GNR1
  • File Size: 555996 KB
  • Manufacturer: FREESCALE [Freescale Semiconductor, Inc]
  • Click here to Download

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